Lateral current crowding in deep UV light emitting diodes over sapphire substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5083-5087

  Shatalov, Maxim ^a   Simin, Grigory ^a   Adivarahan, Vinod ^a   Chitnis, Ashay ^a   Wu, Shuai ^a   Pachipulusu, Radhika ^a   Mandavilli, Vasavi ^a   Simin, Kirill ^a   Zhang, Jian Ping ^a   Yang, Jin Wei ^a   Khan, Muhammad Asif ^a  

^a University of South Carolina   (United States)

Author keywords

AlInGaN; Current crowding; Quaternary; UV LED

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; ULTRAVIOLET RADIATION;

CURRENT CROWDING;

LIGHT EMITTING DIODES;

EID: 0036698377     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5083     Document Type: Article

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