Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 5 B, 2000, Pages

  Otsuka, Nobuyuki ^a   Tsujimura, Ayumu ^a   Hasegawa, Yoshiaki ^a   Sugahara, Gaku ^a   Kume, Masahiro ^a   Ban, Yuzaburoh ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROOPTICAL EFFECTS; LIGHT EMISSION; LIGHT EMITTING DIODES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; ULTRAVIOLET RADIATION;

ALUMINUM GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0033718878     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l445     Document Type: Article

References (22)