InGaN multi-quantum-well-structure laser diodes with cleaved mirror cavity facets

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 2 B, 1996, Pages

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; QUANTUM WELL LASERS; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CLEAVAGE; CLEAVED MIRROR CAVITY FACETS; INDIUM GALLIUM NITRIDE; LASER THRESHOLD CURRENT DENSITY; MULTI QUANTUM WELL STRUCTURE LASER DIODES; PULSED CURRENT INJECTION;

SEMICONDUCTOR LASERS;

EID: 0030081829     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.L217     Document Type: Article

References (17)