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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 270-273

Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE

(11) Iida, Kazuyoshi a Kawashima, Takeshi a Miyazaki, Atsushi a Kasugai, Hideki a Mishima, Syunsuke a Honshio, Akira a Miyake, Yasuto a Iwaya, Motoaki a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

A3. Heteroepitaxial lateral overgrowth; A3. Metalorganic vapor phase epitaxy; B1. AlGaN; B1. GaN; B1. LT AlN interlayer; B3. UV laser diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HETEROEPITAXIAL LATERAL OVERGROWTH; LOW-TEMPERATURE-DEPOSITED (LT-) BUFFER LAYER TECHNIQUE; PULSED CURRENT INJECTION; THREADING DISLOCATIONS;

SEMICONDUCTOR LASERS;

EID: 9944231366 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.052 Document Type: Conference Paper

Times cited : (34)

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