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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 8 A, 2001, Pages

Characteristics of ultraviolet laser diodes composed of quaternary AlxInyGa(1-x-y)N

(4) Nagahama, S a Yanamoto, T a Sano, M a Mukai, T a

a NICHIA CORPORATION (Japan)

Author keywords

AlInGaN; Lateral overgrowth; Quantum well; Ultraviolet laser

Indexed keywords

APPROXIMATION THEORY; CURRENT DENSITY; ELECTRIC POTENTIAL; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM WELL LASERS; THERMAL EFFECTS;

CURRENT INJECTION; SINGLE QUANTUM WELL; THRESHOLD CURRENT DENSITY; ULTRAVIOLET LASER DIODES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035416042 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l788 Document Type: Letter

Times cited : (61)

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