Growth and Optical Properties of Quaternary InAlGaN for 300 nm Band UV-Emitting Devices

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 83-89

  Hirayama, H ^a   Kinoshita, A ^a,b   Hirata, A ^b   Aoyagi, Y ^a  

^a RIKEN   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1942489299     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<83::AID-PSSA83>3.0.CO;2-3     Document Type: Article

References (9)

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