Gan growth using gan buffer layer

Japanese Journal of Applied Physics

Volumn 30, Issue 10A, 1991, Pages L1705-L1707

  Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

AIN; Buffer layer; GaN; Hall measurement; MOCVD

Indexed keywords

HALL EFFECT - MEASUREMENTS; SEMICONDUCTING FILMS - CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES, LIGHT EMITTING;

BUFFER LAYER; GALLIUM NITRIDE GROWTH; MOCVD REACTORHALL MOBILITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0026244249     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.L1705     Document Type: Article

References (4)

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4. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki: J. Cryst. Growth 98 (1989) 209.