Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N

Solid State Communications

Volumn 103, Issue 5, 1997, Pages 273-278

  Malikova, L ^a   Huang, Y S ^a,b   Pollak, Fred H ^a   Feng, Z C ^c   Schurman, M ^c   Stall, R A ^c  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; EXCITONS; OPTICAL PROPERTIES; PHONONS;

CONTACTLESS ELECTROREFLECTANCE; ELECTROMODULATION; EXCITONIC INTERBAND TRANSITIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031208435     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)00160-9     Document Type: Article

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