Report on the growth of bulk aluminum nitride and subsequent substrate preparation

Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 317-321

  Carlos Rojo, J ^a   Slack, Glen A ^a   Morgan, Kenneth ^a   Raghothamachar, Balaji ^b   Dudley, Michael ^b   Schowalter, Leo J ^a  

^a Crystal IS Inc   (United States)

^b STONY BROOK UNIVERSITY   (United States)

Author keywords

A1. X ray topography; A2. Single crystal growth; B1. Nitrides; B2. Semiconducting aluminium compounds

Indexed keywords

ALUMINUM NITRIDE; CHEMICAL MECHANICAL POLISHING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

X RAY DOUBLE CRYSTAL DIFFRACTION; X RAY TOPOGRAPHY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035480395     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01452-X     Document Type: Conference Paper

References (12)