InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 7 SUPPL. B, 1998, Pages

  Mukai, Takashi ^a   Takekawa, Kazunori ^a   Nakamura, Shuji ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Electrical static discharge; Epitaxially laterally overgrown GaN; InGaN; Leakage current; LED; Quantum well structure

Indexed keywords

EPITAXIAL GROWTH; LEAKAGE CURRENTS; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

STATIC ELECTRIC DISCHARGE;

LIGHT EMITTING DIODES;

EID: 0032114637     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l839     Document Type: Article

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