AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5532-5534

  Zhang, J P ^a   Hu, X ^a   Bilenko, Yu ^a   Deng, J ^a   Lunev, A ^a   Shur, M S ^a   Gaska, R ^a   Shatalov, M ^b   Yang, J W ^b   Khan, M A ^b  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS-WAVE POWER; LIGHT-GENERATED CARRIERS; RADIATIVE RECOMBINATION RATE; SPECTRUM PURITY;

ELECTRONS; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODETECTORS; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 19944430795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1831557     Document Type: Article

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