Accumulation hole layer in p-GaN/AlGaN heterostructures

Applied Physics Letters

Volumn 76, Issue 21, 2000, Pages 3061-3063

  Shur, M S ^a   Bykhovski, A D ^a   Gaska, R ^a   Yang, J W ^b   Simin, G ^b   Khan, M A ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001259716     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126579     Document Type: Article

References (4)

1. Colin Wood (private communication).
2. L. S. McCarthy, P. Kozodoy, M. J. W. Rodwell, S. P. DenBaars and U. K. Mishra, IEEE Electron Device Lett. 20, 211 (1999).
3. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 81, 6332 (1997).
4. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 10024 (1997).