Growth of high-quality AlN and AlN/GaN/AlN heterostructure on sapphire substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 SUPPL. B, 1996, Pages

  Ohba, Yasuo ^a   Hatano, Ako ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Aluminum nitride; Gallium nitride; Heterostructure; Metalorganic chemical vapor deposition; Sapphire; Semiconductor

Indexed keywords

EID: 0000561505     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1013     Document Type: Article

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