Fabrication of an InGan multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4703-4705

  Wang, Hailong ^a   Kumagai, Masami ^a   Tawara, Takehiko ^a   Nishida, Toshio ^a   Akasaka, Tetsuya ^a   Kobayashi, Naoki ^a   Saitoh, Tadashi ^a  

^a Bio Medical Informatics Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FINITE DIFFERENCE METHOD; GALLIUM NITRIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TIME DOMAIN ANALYSIS;

DISTRIBUTED BRAGG REFLECTORS (DBR);

QUANTUM WELL LASERS;

EID: 0037449283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1530749     Document Type: Article

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