An InGaN-based horizontal-cavity surface-emitting laser diode

Applied Physics Letters

Volumn 84, Issue 20, 2004, Pages 4104-4106

  Akasaka, Tetsuya ^a   Nishida, Toshio ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; ETCHING; FABRY-PEROT INTERFEROMETERS; FILM GROWTH; LASER BEAM EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

DRY-ETCHING; MICROMIRRORS; SURFACE-EMITTING LASER DIODES;

SEMICONDUCTOR LASERS;

EID: 2942581568     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1753068     Document Type: Article

References (7)

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