AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1363-1366

  Kipshidze, G ^a   Kuryatkov, V ^a   Zhu, K ^a   Borisov, B ^a   Holtz, M ^a   Nikishin, S ^b   Temkin, H ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; CARRIER CONCENTRATION; CARRIER MOBILITY; CATHODOLUMINESCENCE; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SPECTROSCOPIC ANALYSIS; SUPERLATTICES;

HOMOJUNCTIONS;

LIGHT EMITTING DIODES;

EID: 0037320107     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1535255     Document Type: Article

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