AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3666-3668

  Adivarahan, V ^a   Wu, S ^a   Chitnis, A ^a   Pachipulusu, R ^a   Mandavilli, V ^a   Shatalov, M ^a   Zhang, J P ^a   Khan, M Asif ^a   Tamulaitis, G ^b   Sereika, A A ^b   Yilmaz, I ^b   Shur, M S ^b   Gaska, R ^c  

^a University of South Carolina   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; KEY MATERIALS; OUTPUT POWER; PEAK EMISSIONS; PULSED PUMPING; ROOM TEMPERATURE; SINGLE QUANTUM WELL;

LIGHT EMISSION; OPTICAL PUMPING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 79956022396     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519100     Document Type: Article

References (9)

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