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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 1-7, 2005, Pages

10 Milliwatt pulse operation of 265 nm AlGaN light emitting diodes

(12) Bilenko, Yuriy a Lunev, Alex a Hu, Xuhong a Deng, Jianyu a Katona, Thomas M a Zhang, Jianping a Gaska, Remis a Shur, Michael S b Sun, Wenhong c Adivarahan, Vinod c Shatalov, Maxim c Khan, Asif c

a SENSOR ELECTRONIC TECHNOLOGY INC (United States)

b RENSSELAER POLYTECHNIC INSTITUTE (United States)

c University of South Carolina (United States)

Author keywords

AlGaN; Deep UV light emitting diodes; MEMOCVD; Multiple quantum well

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FIRE DETECTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

ALGAN; DEEP UV LIGHT EMITTING DIODES; MIGRATION-ENHANCED METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MEMOCVD); MULTIPLE-QUANTUM-WELLS;

LIGHT EMITTING DIODES;

EID: 20244368054 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.L98 Document Type: Article

Times cited : (58)

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