High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3497-3499

  Asano, T ^a   Takeya, M ^a   Tojyo, T ^a   Mizuno, T ^a   Ikeda, S ^a   Shibuya, K ^a   Hino, T ^a   Uchida, S ^a   Ikeda, M ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BEAM DIVERGENCE ANGLES; BLUE-VIOLET LASER DIODES; CLADDING LAYER; ELECTRON BLOCKING LAYER; GUIDING LAYER; HIGH-POWER; JUNCTION PLANE; LAYER STRUCTURES; LOW ASPECT RATIO; LOW THRESHOLD CURRENT; OPTICAL CONFINEMENT FACTORS; THRESHOLD CURRENTS;

PHYSICAL PROPERTIES; PHYSICS;

ASPECT RATIO;

EID: 79955991722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1478157     Document Type: Article

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