Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5192-5194

  Hwang, Jeonghyun ^a   Schaff, William J ^a   Eastman, Lester F ^a   Bradley, Shawn T ^b   Brillson, Leonard J ^b   Look, David C ^c   Wu, J ^d   Walukiewicz, Wladek ^d   Furis, Madalina ^e   Cartwright, Alexander N ^e  

^a School of Operations Research and Industrial Engineering   (United States)

^b The Ohio State University   (United States)

^c WRIGHT STATE UNIVERSITY   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

MOLE FRACTION;

ALUMINUM ALLOYS;

EID: 0347296279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534395     Document Type: Article

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