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Applied Physics Letters

Volumn 71, Issue 20, 1997, Pages 2898-2900

Optical properties of GaN/AlGaN multiple quantum well microdisks

(10) Mair, R A a Zeng, K C a Lin, J Y a Jiang, H X a Zhang, B b Dai, L b Tang, H c Botchkarev, A c Kim, W c Morkoc H c

a KANSAS STATE UNIVERSITY (United States)

b PEKING UNIVERSITY (China)

c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS; MOLECULAR BEAM EPITAXY; OPTICAL PUMPING; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; DRY ETCHING; ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY;

INTRINSIC TRANSITION; MICROCAVITY LASERS; MICRODISKS STRUCTURE; PUMP INTENSITIES; VERTICAL CAVITY SURFACE EMITTING LASER; MULTIPLE QUANTUM WELL MICRODISK; OPTICAL TRANSITION; PICOSECOND TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

LIGHT EMISSION; SEMICONDUCTOR QUANTUM WELLS;

EID: 0031260803 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120209 Document Type: Article

Times cited : (40)

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