Deep ultraviolet light-emitting diodes using quaternary AlInGaN multiple quantum wells

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 2, 2002, Pages 302-309

  Shatalov, M ^a,b   Zhang, J ^b   Chitnis, A S ^a,b   Adivarahan, V ^b   Yang, J ^b   Simin, G ^a,b   Khan, M Asif ^a,b  

^a IEEE   (United States)

^b University of South Carolina   (United States)

Author keywords

Epitaxial growth; Light emitting diodes; Lighting; Quantum well devices; Ultraviolet generation

Indexed keywords

ALUMINUM INDIUM GALLIUM NITRIDE; CURRENT CROWDING; PULSED ATOMIC LAYER EPITAXY; ULTRAVIOLET GENERATION; ULTRAVIOLET LIGHT EMITTING DIODES;

CHARACTERIZATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; LIGHT EMISSION; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON CARBIDE; SUBSTRATES; ULTRAVIOLET DEVICES;

LIGHT EMITTING DIODES;

EID: 0036493225     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.999185     Document Type: Article

References (22)

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