AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 2, 2002, Pages 298-301

  Zhu, Ting Gang ^b   Denyszyn, Jonathan C ^b   Chowdhury, Uttiya ^b   Wong, Michael M ^b   Dupuis, Russell D ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

AlGaN; GaN; Metal organic chemical vapor deposition; Quantum well structure; Superlattice; UV LED

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; SILICON CARBIDE; ULTRAVIOLET DEVICES;

EMISSION PEAK; HIGH CURRENT DENSITY DIRECT CURRENT INJECTION; HOLE CONDUCTION; ULTRAVIOLET LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0036493185     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.999184     Document Type: Article

References (9)

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7. 0.8N/GaN superlattices
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