Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-XN/GaN superlattices

Journal of Applied Physics

Volumn 88, Issue 4, 2000, Pages 2030-2038

  Goepfert, I D ^a   Schubert, E F ^a   Osinsky, A ^b   Norris, P E ^b   Faleev, N N ^c  

^a Boston University   (United States)

^b NZ Applied Technologies   (United States)

^c Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000927895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1305842     Document Type: Article

References (28)

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