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Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 394-400

Structural defects and relation with optoelectronic properties in highly Mg-doped GaN

(10) Leroux, M a Vennegues P a Dalmasso, S a Benaissa, M a Feltin, E a De Mierry, P a Beaumont, B a Damilano, B a Grandjean, N a Gibart, P a

a CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ENERGY DISPERSIVE SPECTROSCOPY; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

PYRAMIDAL INVERSION DOMAINS; STRUCTURAL DEFECTS;

GALLIUM NITRIDE;

EID: 0036670246 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200208)192:2<394::AID-PSSA394>3.0.CO;2-2 Document Type: Article

Times cited : (38)

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