Si-doping in GaN grown by metal-organic vapor phase epitaxy using tetraethylsilane

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 4 B, 1996, Pages

  Kaneda, Naoki ^a   Detchprohm, Theeradetch ^a   Hiramatsu, Kazumasa ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; HALL EFFECT; IONIZATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES;

ELECTRON CONCENTRATION; GALLIUM NITRIDE; LIQUID SOURCE; SILICON DOPING; TETRAETHYLSILANE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030121350     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l468     Document Type: Article

References (10)