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Volumn 61, Issue 19, 2000, Pages 12598-12601

Incorporation, diffusion, and electrical activity of Li in GaN

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[No Author keywords available]

Indexed keywords


EID: 2342470350     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.12598     Document Type: Article
Times cited : (9)

References (14)
  • 4
    • 0348164170 scopus 로고    scopus 로고
    • F. Bernardini, V. Fiorentini, and R.M. Nieminen, ibid., p. 2881
    • V. Fiorentini, F. Bernardini, A. Bosin, and D. Vanderbilt, in The Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2877;F. Bernardini, V. Fiorentini, and R.M. Nieminen, ibid., p. 2881.
    • The Physics of Semiconductors , pp. 2877
    • Fiorentini, V.1    Bernardini, F.2    Bosin, A.3    Vanderbilt, D.4
  • 10
    • 0029771080 scopus 로고    scopus 로고
    • A. Bosin, V. Fiorentini, and D. Vanderbilt, in Gallium Nitride and Related Compounds, edited by R. D. Dupuis, J. A. Edmond, F. Ponce, and S. Nakamura, MRS Symposia Proceedings, No. 395 (Materials Research Society, Pittsburgh, 1996), p. 503.
    • (1996) MRS Symposia Proceedings , pp. 503
    • Bosin, A.1    Fiorentini, V.2    Vanderbilt, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.