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Volumn 78, Issue 2, 2001, Pages 222-224

Electrical properties of p-type GaN:Mg codoped with oxygen

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0003250123     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1335542     Document Type: Article
Times cited : (92)

References (21)
  • 13
    • 0346229331 scopus 로고    scopus 로고
    • Application for Japanese Patent (published in JP H10-144960, JP H10-154829)
    • S. Nakamura, Application for Japanese Patent (published in JP H10-144960, JP H10-154829).
    • Nakamura, S.1
  • 15
    • 0346859761 scopus 로고    scopus 로고
    • note
    • D is only possible for T>400 K when the dependence of hole concentration on reciprocal temperature undergoes saturation. Thus, only compensation ratio. C and ionisation energy can be accurately determined in the temperature range studied.
  • 19
    • 0348120400 scopus 로고    scopus 로고
    • note
    • A .


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.