Optical properties of doped GaN grown by a modified molecular beam epitaxial (MBE) process on GaAs substrates

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 597-600

  Cheng, T S ^a   Hooper, S E ^a   Jenkins, L C ^a   Foxon, C T ^a   Lacklison, D E ^a   Dewsnip, J D ^a   Orton, J W ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BERYLLIUM; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ACCEPTOR IONIZATION ENERGY; GALLIUM NITRIDE; WURTZITE; ZINCBLENDE;

SEMICONDUCTOR GROWTH;

EID: 0030230787     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00057-7     Document Type: Article

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