Growth of GaN without yellow luminescence

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 625-629

  Zhang, X ^a   Kung, P ^a   Walker, D ^a   Saxler, A ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; GERMANIUM; LUMINESCENCE; MAGNESIUM; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES;

GALLIUM NITRIDE; GALLIUM VACANCY; YELLOW LUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029747741     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)