Intentional control of n-type conduction for Si-doped AlN and Al XGa1-XN (0.42≤x<1)

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1255-1257

  Taniyasu, Yoshitaka ^a   Kasu, Makoto ^a   Kobayashi, Naoki ^a  

^a Bio Medical Informatics Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALN; ELECTRON CONCENTRATION; HIGH AL CONTENT; N-TYPE CONDUCTION; SELF-COMPENSATION; SI DOPANT;

ALUMINUM; DOPING (ADDITIVES); GALLIUM; SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956049912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499738     Document Type: Article

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