Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 3, 1996, Pages 1322-1326

  Wetzel, C ^a   Walukiewicz, W ^a   Haller, E ^a   Ager, J ^a   Grzegory, I ^b   Porowski, S ^b   Suski, T ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000447614     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.1322     Document Type: Article

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