Metastability and persistent photoconductivity in Mg-doped p-type GaN

Applied Physics Letters

Volumn 68, Issue 13, 1996, Pages 1808-1810

  Johnson, C ^a   Lin, J Y ^a   Jiang, H X ^a   Khan, M Asif ^b   Sun, C J ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; HALL EFFECT; IMPURITIES; LOW TEMPERATURE PHENOMENA; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; STABILITY; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

ENERGY BARRIERS; FREE HOLE CAPTURE; GALLIUM NITRIDE; LARGE LATTICE RELAXATION; METASTABILITY; PERSISTENT PHOTOCONDUCTIVITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030107611     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116020     Document Type: Article

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