Hall-effect characterization of III-V nitride semiconductors for high efficiency light emitting diodes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 211-217

  Gotz W ^a   Kern, R S ^a   Chen, C H ^a   Liu, H ^a   Steigerwald, D A ^a   Fletcher, R M ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRONIC PROPERTIES; GERMANIUM; HALL EFFECT; IONIZATION; LIGHT EMITTING DIODES; MAGNESIUM; OXYGEN; SEMICONDUCTOR DOPING; SILICON; SUBSTITUTION REACTIONS; THERMAL VARIABLES MEASUREMENT;

ACCEPTORS; COULOMB INTERACTIONS; DONORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0344671653     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00393-6     Document Type: Article

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