Doping properties of C, Si, and Ge impurities in GaN and AlN

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 15, 1997, Pages 9496-9505

  Boguslawski P ^a   Bernholc, J ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141546306     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.9496     Document Type: Article

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