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Volumn 36, Issue 6 A, 1997, Pages
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Carrier density of epitaxial InN grown by plasma-assisted metalorganic chemical vapor deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CHEMICAL BONDS;
EPITAXIAL GROWTH;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NITROGEN;
PLASMA APPLICATIONS;
REACTION KINETICS;
SAPPHIRE;
SEMICONDUCTOR GROWTH;
SURFACE TREATMENT;
SEMICONDUCTING INDIUM NITRIDE;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0031170119
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.36.l658 Document Type: Article |
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Times cited : (16)
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References (10)
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