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Volumn 69, Issue 2, 1996, Pages 233-235

Amphoteric properties of substitutional carbon impurity in GaN and AIN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001799977     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117934     Document Type: Article
Times cited : (95)

References (17)
  • 6
    • 6044237235 scopus 로고
    • unpublished
    • G. Li and S. Rabii (1992) (unpublished).
    • (1992)
    • Li, G.1    Rabii, S.2
  • 9
    • 6044251402 scopus 로고    scopus 로고
    • note
    • The positions of the impurity-induced energy levels are quoted relative to the relevant band edges. These should be close to the actual excitation energies, since the calculated electron-electron repulsion parameters are smaller than 0.2 eV for these spatially rather extended states.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.