Near ultraviolet luminescence of Be doped GaN grown by reactive molecular beam epitaxy using ammonia

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2692-2694

  Salvador, A ^a   Kim, W ^a   Aktas, O ^a   Botchkarev, A ^a   Fan, Z ^a   Morkoc H ^a,b  

^a University of Illinois at Urbana Champaign   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001364155     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117680     Document Type: Article

References (23)

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