Calculations of silicon self-interstitial defects

Physical Review Letters

Volumn 82, Issue 12, 1999, Pages 2351-2354

  Leung, W K ^a   Needs, R J ^a   Rajagopal, G ^a   Itoh, S ^b   Ihara, S ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3342965087     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.83.2351     Document Type: Article

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