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Volumn 58, Issue 7, 1998, Pages 3879-3887

Acceptor binding energies in GaN and AlN

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EID: 0001278271     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.3879     Document Type: Article
Times cited : (107)

References (51)
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    • J. A. Majewski, M. Städle, and P. Vogl, in III-V Nitrides, edited by F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monemar, MRS Symposia Proceedings No. 449 (Materials Research Society, Pittsburgh, 1997), p. 887.
    • (1997) MRS Symposia Proceedings , pp. 887
    • Majewski, J.1    Städle, M.2    Vogl, P.3
  • 40
    • 0031361131 scopus 로고    scopus 로고
    • Y. C. Yeo, T. C. Chong, and M. F. Li, in Nitride Semiconductors, edited by F. A. Ponce, S. P. Den Baars, B. K. Meyer, S. Nakamura, and S. Strile, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 923.
    • (1998) MRS Symposia Proceedings , pp. 923
    • Yeo, Y.1    Chong, T.2    Li, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.