Thermal annealing effect on nitrogen vacancy in proton-irradiated Al xGa1-xN

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2072-2074

  Zhou, Qiaoying ^a   Manasreh, M O ^a  

^a University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION BAND; ALN; ELECTRONIC TRANSITION; FURNACE ANNEALING; LATTICE DISTORTIONS; NITROGEN VACANCIES; PHONON ENERGIES; PHONON MODE; TEMPERATURE RANGE; THERMAL ANNEALING EFFECTS; THERMAL MIGRATION;

DEFECTS; FULL WIDTH AT HALF MAXIMUM; GALLIUM; ISOTHERMAL ANNEALING; NITROGEN; PHONONS; PROTONS;

ALUMINUM;

EID: 79955982881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1463703     Document Type: Article

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