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Volumn 60, Issue 11, 1999, Pages 8147-8157

Theory of point defects in GaN, AlN, and BN: Relaxation and pressure effects

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Indexed keywords


EID: 0001268519     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.8147     Document Type: Article
Times cited : (135)

References (35)
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    • (1994) Diamond, Sic and Nitride Wide Bandgap Semiconductors , pp. 687
    • Neugebauer, J.1    Van De Walle, C.G.2
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    • E. Kaxiras, J. Joannopoulos, P. Vashishta, and R. K. Kalia, MRS Symposia Proceedings No. 408, (Materials Research SocietyPittsburgh
    • J. Neugebauer and C. G. van de Walle, in Materials Theory, Simulations, and Parallel Algorithms, edited by E. Kaxiras, J. Joannopoulos, P. Vashishta, and R. K. Kalia, MRS Symposia Proceedings No. 408, (Materials Research SocietyPittsburgh, 1996), p. 43.
    • (1996) Materials Theory, Simulations, and Parallel Algorithms , pp. 43
    • Neugebauer, J.1    Van De Walle, C.G.2
  • 31
    • 16644389557 scopus 로고    scopus 로고
    • T. D. Moustakas, J. P. Dismukes, and S. J. Pearton, (Electrochemical Society, Pennington
    • T. Mattila, R. M. Nieminen, and A.P. Seitsonen, in III-V Nitride Materials and Processes, edited by T. D. Moustakas, J. P. Dismukes, and S. J. Pearton, (Electrochemical Society, Pennington, 1996), p. 205.
    • (1996) III-V Nitride Materials and Processes , pp. 205
    • Mattila, T.1    Nieminen, R.M.2    Seitsonen, A.P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.