Theory of point defects and complexes in GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 645-656

  Neugebauer, Jorg ^a   Van de Walle, Chris G ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; HYDROGEN; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLUBILITY;

ACCEPTOR; COMPLEXES; DEFECT CONCENTRATION; DOPANTS; ENERGETIC PROPERTIES; FREE CARRIER CONCENTRATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029727122     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (24)