Calculated defect levels in GaN and AlN and their pressure coefficients

Solid State Communications

Volumn 101, Issue 10, 1997, Pages 747-752

  Gorczyca, I ^a,b   Svane, A ^a   Christensen, N E ^a  

^a AARHUS UNIVERSITY   (Denmark)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CRYSTAL IMPURITIES; GREEN'S FUNCTION; HYDROSTATIC PRESSURE; LATTICE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

DENSITY FUNCTIONAL THEORY (DFT); LINEAR MUFFIN TIN ORBITAL METHOD; LOCAL DENSITY APPROXIMATION (LDA); NITROGEN ANTISITE;

NITRIDES;

EID: 0031097963     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(96)00689-8     Document Type: Article

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