A codoping method in GaN proposed by ab initio electronic-structure calculations

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 1185-1190

  Yamamoto, T ^a,b   Katayama Yoshida, H ^a,c  

^a OSAKA UNIVERSITY   (Japan)

^b ASAHI CHEMICAL INDUSTRY CO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A codoping method; Electronic band structures; GaN; Self compensation; The Madelung energy; Wide band gap semiconductors

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY GAP; SEMICONDUCTING GALLIUM COMPOUNDS;

CODOPING METHOD; GALLIUM NITRIDE; IONIC CHARGE DISTRIBUTION; MADELUNG ENERGY;

SEMICONDUCTOR DOPING;

EID: 3743103808     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1185     Document Type: Article

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