Mg and O codoping in p-type GaN and AlxGa1-xN (0 (7) Kipshidze, G a Kuryatkov, V a Borisov, B a Kudryavtsev, Yu b Asomoza, R b Nikishin, S a Temkin, H a a Department of Electrical and Computer Engineering (United States) b DEPARTAMENTO DE FÍSICA (Mexico)

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2910-2912

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR ACTIVATION; ALGAN; CO-DOPING; DIFFUSION CURRENTS; FLUX RATIO; LOW-ACTIVATION ENERGY; MG INCORPORATION; P-N JUNCTION; P-TYPE GAN; SURFACE STOICHIOMETRY; TEMPERATURE DEPENDENCE;

ALUMINUM; GALLIUM NITRIDE; HOLE CONCENTRATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; STOICHIOMETRY;

ACTIVATION ENERGY;

EID: 79956041958     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471373     Document Type: Article

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