Adsorption and incorporation of silicon at GaN(0001) surfaces

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 2008-2010

  Rosa, A L ^a   Neugebauer, J ^a   Northrup, J E ^b   Lee, Chae Deok ^c   Feenstra, R M ^c  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INCORPORATION MECHANISM; SCANNING TUNNELING MICROSCOPY (STM); SI CONCENTRATION; STABLE SURFACES;

ADSORPTION; DENSITY FUNCTIONAL THEORY; GALLIUM NITRIDE; PHASE DIAGRAMS; SCANNING TUNNELING MICROSCOPY; SURFACE CHEMISTRY; VANADIUM;

SILICON;

EID: 79956038331     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452785     Document Type: Article

References (12)

1. J. Neugebauer and C. G. Van de Walle, Adv. Solid State Phys. 35, 25 (1996). ads FSTKA2 0430-3393
2. W. Götz, N. M. Johnson, C. Chen, H. Liu, C. Kuo, and W. Imler, Appl. Phys. Lett. 68, 3144 (1996). apl APPLAB 0003-6951
3. S. Tanaka, M. Takeuchi, and Y. Aoyagi, Jpn. J. Appl. Phys., Part 2 39, L831 (2000). jjc JAPLD8 0021-4922
4. X.-Q. Shen, S. Tanaka, S. Iwai, and Y. Ayoagi, Appl. Phys. Lett. 72, 344 (1998). apl APPLAB 0003-6951
5. A. Cremades, L. Görgens, O. Ambacher, M. Stutzmann, and F. Scholz, Phys. Rev. B 61, 2812 (2000). prb PRBMDO 0163-1829
6. L. T. Romano, C. G. Van de Walle, J. W. Ager III, W. Götz, and R. S. Kern, J. Appl. Phys. 87, 7745 (2000). jap JAPIAU 0021-8979
7. A. Munkholm, C. Thompson, M. V. Ramana Murty, J. A. Eastman, O. Auciello, G. B. Stephenson, P. Fini, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. 77, 1626 (2000). apl APPLAB 0003-6951
8. A. R. Smith, R. M. Feenstra, D. W. Greve, M.-S. Shin, M. Skowronski, J. Neugebauer, and J. E. Northrup, Surf. Sci. 423, 70 (1999). sus SUSCAS 0039-6028
9. C. D. Lee, R. M. Feenstra, A. L. Rosa, J. Neugebauer, and J. E. Northrup, J. Vac. Sci. Technol. B 19, 1619 (2001). jvb JVTBD9 0734-211X
10. J. E. Northrup, J. Neugebauer, R. M. Feenstra, and A. R. Smith, Phys. Rev. B 61, 9932 (2000). prb PRBMDO 0163-1829
11. V. Ramachandran, R. M. Feenstra, W. L. Sarney, L. Salamanca-Riba, J. E. Northrup, L. T. Romano, and D. W. Greve, Appl. Phys. Lett. 75, 808 (1999). apl APPLAB 0003-6951
12. H. Lahrèche, P. Vennéguès, B. Beaumont, and P. Gibart, J. Cryst. Growth 205, 245 (1999). jcr JCRGAE 0022-0248