The adsorption of oxygen at GaN surfaces

Applied Physics Letters

Volumn 74, Issue 12, 1999, Pages 1695-1697

  Zywietz, Tosja K ^a   Neugebauer, Jörg ^a   Scheffler, Matthias ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; OXYGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

DENSITY-FUNCTIONAL THEORY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032615493     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123658     Document Type: Article

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