Thickness dependence of electronic properties of GaN epilayers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 525-530

  Gotz, W ^a   Walker, J ^a   Romano, L T ^a   Johnson, N M ^a   Molnar, R J ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; NITRIDES; POLISHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 0030672462     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)