Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates

IEEE Electron Device Letters

Volumn 25, Issue 3, 2004, Pages 153-155

  Zafar, Sufi ^a   Lee, Byoung H ^b   Stathis, James ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

Hafnium oxide; High gate dielectric; Metal gate electrode; Negative bias temperature instability (NBTI)

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; NEGATIVE TEMPERATURE COEFFICIENT; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TUNGSTEN;

HAFNIUM OXIDE; HIGH-Κ GATE DIELECTRICS; METAL GATE ELECTRODES; NEGATIVE-BIAS TEMPERATURE INSTABILITY (NBTI);

FIELD EFFECT TRANSISTORS;

EID: 1642289216     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.824244     Document Type: Article

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